| 전자부품 데이터시트 검색엔진 |
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ACT412US-T 데이터시트(PDF) 5 Page - Active-Semi, Inc |
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ACT412US-T 데이터시트(HTML) 5 Page - Active-Semi, Inc |
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5 / 17 page ![]() ACT412 Rev 1, 30-Oct-13 Innovative PowerTM - 5 - www.active-semi.com Copyright © 2013 Active-Semi, Inc. Active-Semi Proprietary―For Authorized Recipients and Customers ActivePSR TM is a trademark of Active-Semi. PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Protection CS Short Waiting Time 2 2.25 3 µs CS Short Detection Threshold 0.1 0.15 V CS Open Threshold Voltage 1.75 V Abnormal OCP Blanking Time 190 ns Inductance Short CS Threshold Voltage 1.75 V Thermal Shutdown Temperature 135 ˚C Thermal Hysteresis 20 ˚C Line UVLO IFBUVLO 0.2 mA Line UVLO Hysteresis 20 µA Line OVP IFBOVP 2.4 mA Valley Detection Valley Detection Time Window VCOMP = 0.45V 3.3 µs Vo Short Detection Threshold VFBUVLO 0.28 V VFB Over Voltage Protection 3 V ELECTRICAL CHARACTERISTICS CONT’D (VDD = 18V, LM = 0.5mH, RCS = 0.75Ω, VOUT = 13V, NP = 68, NS =12, NA = 17, TA = 25°C, unless otherwise specified,12V0.4A applica- tion) |
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