| 전자부품 데이터시트 검색엔진 |
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ACT413 데이터시트(PDF) 4 Page - Active-Semi, Inc |
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ACT413 데이터시트(HTML) 4 Page - Active-Semi, Inc |
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4 / 16 page ![]() ACT413 Rev 2, 27-Feb-14 Innovative PowerTM - 4 - www.active-semi.com Copyright © 2014 Active-Semi, Inc. Active-Semi Proprietary―For Authorized Recipients and Customers ActivePSR TM is a trademark of Active-Semi. PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT RCORD Output Cable Resistance Compensation DVCOMP ACT413 6 % GATE DRIVE Gate Rise Time TRISE VDD = 10V, CL = 1nF 150 250 ns Gate Falling Time TFALL VDD = 10V, CL = 1nF 90 ns Gate Low Level ON-Resistance RONLO ISINK = 30mA 10 Ω Gate High Level ON-Resistance RONHI ISOURCE = 30mA 31 Ω Gate Leakage Current GATE = 18V, before VDD turn-on 1 µA COMPENSATION Inside Compensate Resistor RCOMP ACT413 0 kΩ Output Sink Current ICOMP_SINK VFB = 3V, VCOMP = 2V 15 40 µA Output Source Current ICOMP_SOUR CE VFB = 1.5V, VCOMP = 2V 15 40 µA Transconductance of Error Amplifier Gm 71 µA/V Maximum Output Voltage VCOMPMAX VFB = 1.5V 3.5 V Minimum Output Voltage VCOMPMIN VFB = 3V 0.4 V CS to COMP Gain 2 V/V Pre-Amp Gain 1 V/V COMP Leakage Current COMP = 2.5V 1 µA OSCILLATOR Maximum Switching fMAX 76 85 94 kHz Maximum Duty Cycle DMAX 65 75 % Minimum Switching Frequency fMIN 1164 Hz ELECTRICAL CHARACTERISTICS CONT’D VDD = 13V, LM = 0.6mH, RCS = 1.15Ω, VOUT = 5V, NP = 102, NS = 7, NA = 17, TA = 25°C, unless otherwise specified,5V2.4A application.) |
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