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ZXT14P12DX 데이터시트(PDF) 4 Page - Diodes Incorporated

부품명 ZXT14P12DX
상세설명  12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR
PDF  6 Pages
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제조업체  DIODES [Diodes Incorporated]
홈페이지  http://www.diodes.com
Logo DIODES - Diodes Incorporated

ZXT14P12DX 데이터시트(HTML) 4 Page - Diodes Incorporated

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ISSUE 1 - MARCH 2000
ZXT14P12DX
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO
-20
-36
V
IC=-100 A
Collector-Emitter Breakdown
Voltage
V(BR)CEO
-12
-25
V
IC=-10mA*
Emitter-Base Breakdown Voltage
V(BR)EBO
-7.5
-8.5
V
IE=-100 A
Collector Cut-Off Current
ICBO
-100
nA
VCB=-16V
Emitter Cut-Off Current
IEBO
-100
nA
VEB=-6V
Collector Emitter Cut-Off Current
ICES
-100
nA
VCES=-16V
Collector-Emitter Saturation
Voltage
VCE(sat)
-3
-40
-20
-125
-95
-5
-50
-30
-165
-115
mV
mV
mV
mV
mV
IC=-0.1A, IB=-10mA*
IC=-1A, IB=-10mA*
IC=-1A, IB=-50mA*
IC=-6A, IB=-60mA*
IC=-6A, IB=-300mA*
Base-Emitter Saturation Voltage
VBE(sat)
-0.9
V
IC=-6A, IB=-60mA*
Base-Emitter Turn-On Voltage
VBE(on)
-0.85
V
IC=-6A, VCE=-2V*
Static Forward Current Transfer
Ratio
hFE
300
300
250
75
500
450
400
150
900
IC=-10mA, VCE=-2V*
IC=-1A, VCE=-2V*
IC=-6A, VCE=-2V*
IC=-20A, VCE=-2V*
Transition Frequency
fT
110
MHz
IC=-300mA, VCE=-10V
f=30MHz
Output Capacitance
Cobo
205
pF
VCB=-10V, f=1MHz
Turn-On Time
t(on)
158
ns
VCC=-6V, IC=-6A
IB1=IB2=-150mA
Turn-Off Time
t(off)
190
ns
*Measured under pulsed conditions. Pulse width=300
µs. Duty cycle ≤ 2%
4



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