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STP9NM40N 데이터시트(PDF) 3 Page - STMicroelectronics

부품명 STP9NM40N
상세설명  N-channel 400 V, 0.73 Ω typ., 5.6 A MDmesh™II Power MOSFET in DPAK and TO-220 packages
PDF  18 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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STP9NM40N 데이터시트(HTML) 3 Page - STMicroelectronics

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STD9NM40N, STP9NM40N
Electrical ratings
Doc ID 023762 Rev 2
3/18
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage
400
V
VGS
Gate-source voltage
± 25
V
ID
Drain current (continuous) at TC = 25 °C
5.6
A
ID
Drain current (continuous) at TC = 100 °C
4.3
A
IDM
(1)
1.
Pulse width limited by safe operating area.
Drain current (pulsed)
22.4
PTOT
Total dissipation at TC = 25 °C
60
W
dv/dt (2)
2.
ISD ≤ 5.6 A, di/dt ≤ 400 A/µs, VPeak < V(BR)DSS, VDS= 80% V(BR)DSS
Peak diode recovery voltage slope
40
V/ns
Tstg
Storage temperature
- 55 to 150
°C
Tj
Max. operating junction temperature
150
°C
Table 3.
Thermal data
Symbol
Parameter
Value
Unit
DPAK
TO-220
Rthj-case Thermal resistance junction-case max
2.08
°C/W
Rthj-pcb
Thermal resistance junction-pcb max
50
°C/W
Table 4.
Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
2A
EAS
Single pulse avalanche energy
(starting Tj = 25°C, ID = IAR, VDD = 50 V)
140
mJ



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