Power Transistor

RT550PD

Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com

All specifications may change without notice

US Facility : 919-677-8780 / sales@rfhicusa.com

1 / 3

Version 5.2

Product Features

Applications

• High Output Power

P1dB = 40dBm(typ)@2.3GHz

• High Efficiency

• High Power Gain

G1dB = 10dB(typ) @2.3GHz

• High Linearity

• Hermetically sealed package

• Competitive Price

• Repeater

• RF Sub-Systems

• Base Station

• Converter

• MMDS

Description

The RT550PD is designed for base stations and cell extenders as 300 ~ 3000MHz.

Absolute Maximum Ratings

PARAMETER

UNIT

RATING

SYMBOL

Drain to Source Voltage

V

12

Vds

Gate to Source Voltage Range

V

-5~0

Vgs

Power Dissipation

W

37

Pt

Storage Temperature

℃

-65 ~ +200

Tstg

Channel Temperature

℃

175

Tch

PARAMETER

UNIT

MIN

TYP

MAX

SYMBOL

CONDITION

Saturated Drain Current

mA

5000

-

6700

Idss

Vds=3V, Vgs=0V

Vds=3V, Ids=3600mA

Vds=3v, Ids=360mA

Transconductance

mS

-

3300

-

gm

Pinch-off Voltage

V

-1.6

-1.9

-3.5

Vp

Breakdown Voltage Gate-Source

V

-20

-

-25

Bvgs

-

Breakdown Voltage Gate-Drain

V

-20

-

-25

Bvgd

-

Output Power @ 1dB G.C.P

dBm

39

40

-

P1dB

Vds=9V, Id=2.4A

F=2.3GHz

Linear Power Gain

dB

-

10

-

Power added efficiency

@ 1dB

%

-

40

-

ηadd

Thermal Resistance

℃

/W

-

4.0

4.5

Rth

-

Package Type : WP-22