| 전자부품 데이터시트 검색엔진 |
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L6208Q 데이터시트(PDF) 20 Page - STMicroelectronics |
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L6208Q 데이터시트(HTML) 20 Page - STMicroelectronics |
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20 / 34 page ![]() Circuit description L6208Q 20/34 DocID018710 Rev 3 Figure 18. Half step mode Figure 19. Normal drive mode Figure 20. Wave drive mode 5.9 Non-dissipative overcurrent detection and protection The L6208Q device integrates an overcurrent detection circuit (OCD). With this internal overcurrent detection, the external current sense resistor normally used and its associated power dissipation are eliminated. Figure 21 shows a simplified schematic of the overcurrent detection circuit. To implement overcurrent detection, a sensing element that delivers a small but precise fraction of the output current is implemented with each high-side power MOSFET. Since this current is a small fraction of the output current, there is very little additional power dissipation. This current is compared with an internal reference current IREF. When the output current reaches the detection threshold (typically 5.6 A), the OCD comparator signals a fault condition. When a fault condition is detected, the EN pin is pulled below the turn-off threshold (1.3 V typical) by an internal open drain MOSFET with a pull-down capability of 4 mA. By using an external R-C on the EN pin, the OFF time before recovering normal operation can be easily programmed by means of the accurate thresholds of the logic inputs. |
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