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ESAD39MN 데이터시트(PDF) 1 Page - Fuji Electric |
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ESAD39MN 데이터시트(HTML) 1 Page - Fuji Electric |
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1 / 3 page ![]() 1. Gate 2. Drain 3. Source 15.5 5.45 5.45 5.5 3.2 1.6 3.5 1.1 2.1 0.6 ±0.3 ±0.3 ±0.2 ±0.2 ±0.2 ±0.3 ±0.3 +0.2 +0.3 +0.2 —0.1 ±0.2 ø3.2 ESAD39M(C,N,D) (10A) (400V to 600V / 10A) FAST RECOVERY DIODE Outline drawings, mm Features Insulated package by fully molding Super high speed switching Low VF in turn on High reliability Applications High speed power switching Maximum ratings and characteristics Absolute maximum ratings Item Repetitive peak reverse voltage Non-repetitive peak reverse voltage Isolating voltage Average output current Surge current Operating junction temperature Storage temperature Symbol VRRM VRSM Viso IO IFSM Tj Tstg Conditions 50 -40 to +150 -40 to +150 Unit V V V A A °C °C Electrical characteristics (Ta=25°C Unless otherwise specified ) Item Forward voltage drop Reverse current Reverse recovery time Thermal resistance Symbol VFM IRRM t rr Rth(j-c) Conditions IFM=4A VR=VRRM IF=0.1A, IR=0.2A, Irec=0.05A Junction to case Max. 2.5 100 50 2.5 Unit V µA ns °C/W Terminals-to-case, AC. 1min. Square wave, duty=1/2, Tc=85°C Sine wave 10ms Rating -04 -06 400 600 400 600 10* Connection diagram *Average forward current of centertap full wave connection ESAD39M- C ESAD39M- N ESAD39M- D 1 1 1 2 2 2 3 3 3 JEDEC EIAJ 1500 |
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