PRELIMINARY

SOLID STATE DEVICES, INC.

SFF120-28Q

FEATURES:

DATA SHEET #: F00225B

MAXIMUM RATINGS

• Rugged construction with poly silicon gate

• Low RDS (on) and high transconductance

• Excellent high temperature stability

• Very fast switching speed

• Fast recovery and superior dv/dt performance

• Increased reverse energy capability

• Low input and transfer capacitance for easy paralleling

• Hermetically sealed surface mount package

• TX, TXV and Space Level screening available

• Replaces 4x IRF120 Types in One Package

28 PIN CLCC

9.2 AMPS

100 VOLTS

0.35

S

QUAD N-CHANNEL

POWER MOSFET

DESIGNER'S DATA SHEET

14005 Stage Road * Santa Fe Springs, Ca 90670

Phone: (562) 404-4474 * Fax: (562) 404-1773

NOTE: All specifications are subject to change without notification.

SCDs for these devices should be reviewed by SSDI prior to release.

PACKAGE OUTLINE: 28 PIN CLCC

PIN OUT:

MOSFET 1

DRAIN:

5, 6, 7

GATE:

1

SOURCE:

2, 3, 4

MOSFET 2

DRAIN:

9, 10, 11

GATE:

8

SOURCE:

12, 13, 14

MOSFET 3

DRAIN:

19, 20, 21

GATE:

15

SOURCE:

16, 17, 18

MOSFET 4

DRAIN:

23, 24, 25

GATE:

22

SOURCE:

26, 27, 28

(3 PLACES)

±20

Volts

Gate to Source Voltage

9.2

Continuous Drain Current

Drain to Source Voltage

100

Amps

Volts

Thermal Resistance, Junction to Case (All Four)

-55 to +150

Operating and Storage Temperature

10

CHARACTERISTIC

SYMBOL

VALUE

UNIT

Watts

Total Device Dissipation

12.5

9.5

NOTE: All drain/source pins must be connected on the PC board in order to

maximize current carrying capability and to minimize RDS (on)