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1N4151W 데이터시트(PDF) 1 Page - General Semiconductor

부품명 1N4151W
상세설명  SMALL SIGNAL DIODES
PDF  4 Pages
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제조업체  GE [General Semiconductor]
홈페이지  http://www.vishay.com
Logo GE - General Semiconductor

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1N4151W
SMALL SIGNAL DIODES
FEATURES
¨ Silicon Epitaxial Planar Diode
¨ Fast switching diode.
¨ This diode is also available in other
case styles including the SOD-123 case
with the type designation 1N4151W and the Mini-MELF
case with the type designation LL4151.
MECHANICAL DATA
Case: SOD-123 Plastic Case
Weight: approx. 0.01 g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25¡C ambient temperature unless otherwise specified.
SYMBOL
VALUE
UNIT
Reverse Voltage
VR
50
V
Peak Reverse Voltage
VRM
75
V
Rectified Current (Average)
Half Wave Rectification with Resist. Load
at Tamb = 25 ¡C and f
³ 50 Hz
IO
150(1)
mA
Surge Forward Current at t < 1 s and Tj = 25 ¡C
IFSM
500
mA
Power Dissipation at Tamb = 25 ¡C
Ptot
410(1)
mW
Junction Temperature
Tj
150
¡C
Storage Temperature Range
TS
Ð 65 to +150
¡C
NOTES:
(1) Valid provided that electrodes are kept at ambient temperature
1/4/99
Dimensions in inches and (millimeters)
SOD-123
.022 (0.55)
.067 (1.70)
min. .010 (0.25)
Cathode Mark
Top View
.055 (1.40)


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