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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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BAW76 데이터시트(PDF) 2 Page - General Semiconductor |
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BAW76 데이터시트(HTML) 2 Page - General Semiconductor |
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2 / 4 page  Electrical Characteristics (TJ = 25°C unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit Forward Voltage BAW75 VF at IF = 30mA — — 1 V BAW76 at IF = 100mA — — 1 BAW75 VR = 25V — — 100 nA Leakage Current BAW75 IR VR = 25V, Tj = 150°C — — 100 µA BAW76 VR = 50V — — 100 nA BAW76 VR = 50V, Tj = 150°C — — 100 µA Reverse Breakdown Voltage BAW75 V(BR)R tested with 5µA pulses 35 — — V BAW76 75 — — Capacitance BAW75 Ctot VF = VR = 0V —— 4 pF BAW76 — — 2 IF = 10mA, IR = 10mA —— 4 Reverse Recovery Time trr Irr = 1mA ns IF = 10mA, IR = 1mA —— 2 VR =6V, RL = 100 Ω BAW75 and BAW76 Small-Signal Diodes |
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