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BC849 데이터시트(PDF) 2 Page - General Semiconductor

부품명 BC849
상세설명  Small Signal Transistors (NPN)
PDF  6 Pages
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제조업체  GE [General Semiconductor]
홈페이지  http://www.vishay.com
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BC849 데이터시트(HTML) 2 Page - General Semiconductor

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ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Min.
Typ.
Max.
Unit
h-Parameters at VCE = 5 V, IC = 2 mA,
f = 1 kHz,
Small Signal Current Gain
Current Gain Group A
B
C
Input Impedance
Current Gain Group A
B
C
Output Admittance
Current Gain Group A
B
C
Reverse Voltage Transfer Ratio
Current Gain Group A
B
C
hfe
hfe
hfe
hie
hie
hie
hoe
hoe
hoe
hre
hre
hre
–
–
–
1.6
3.2
6
–
–
–
–
–
–
220
330
600
2.7
4.5
8.7
18
30
60
1.5 · 10–4
2 · 10–4
3 · 10–4
–
–
–
4.5
8.5
15
30
60
110
–
–
–
–
–
–
k
Ω
k
Ω
k
Ω
µS
µS
µS
–
–
–
DC Current Gain
at VCE = 5 V, IC = 10 µA
Current Gain Group A
B
C
at VCE = 5 V, IC = 2 mA
Current Gain Group A
B
C
hFE
hFE
hFE
hFE
hFE
hFE
–
–
–
110
200
420
90
150
270
180
290
520
–
–
–
220
450
800
–
–
–
–
–
–
Thermal Resistance Junction to Substrate
Backside
RthSB
–
–
3201)
K/W
Thermal Resistance Junction to Ambient Air
RthJA
–
–
4501)
K/W
Collector Saturation Voltage
at IC = 10 mA, IB = 0.5 mA
at IC = 100 mA, IB = 5 mA
VCEsat
VCEsat
–
–
90
200
250
600
mV
mV
Base Saturation Voltage
at IC = 10 mA, IB = 0.5 mA
at IC = 100 mA, IB = 5 mA
VBEsat
VBEsat
–
–
700
900
–
–
mV
mV
Base-Emitter Voltage
at VCE = 5 V, IC = 2 mA
at VCE = 5 V, IC = 10 mA
VBE
VBE
580
–
660
–
700
720
mV
mV
Collector-Emitter Cutoff Current
at VCE = 80 V
BC846
at VCE = 50 V
BC847
at VCE = 30 V
BC848, BC849
at VCE = 80 V, Tj = 125 °C
BC846
at VCE = 50 V, Tj = 125 °C
BC847
at VCE = 30 V, Tj = 125 °C
BC848, BC849
ICES
ICES
ICES
ICES
ICES
ICES
–
–
–
–
–
–
0.2
0.2
0.2
–
–
–
15
15
15
4
4
4
nA
nA
nA
µA
µA
µA
Gain-Bandwidth Product
at VCE = 5 V, IC = 10 mA, f = 100 MHz
fT
–
300
–
MHz
1) Device on fiberglass substrate, see layout
BC846 THRU BC849



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