SYMBOL CHARACTERISTIC

TEST CONDITIONS

MIN

TYP

MAX

UNITS

I

SC

Short Circuit Current

H = 100 fc, 2850 K

8

10

I

D

Dark Current

H = 0, V

2

10

nA

R

SH

Shunt Resistance

H = 0, V

.5

5

G

Ω

TC R

SH

RSH Temp. Coefficient

H = 0, V

-8

C

J

Junction Capacitance

H = 0, V

2

5

pF

Spectral Application Range (without daylight filter)**

400

1100

nm

Spectral Response - Peak

950

nm

V

BR

Breakdown Voltage

I = 10

mA

50

100

V

NEP

Noise Equivalent Power

V

W/

Hz

tr

Response Time

RL = 1 K

Ω V

5

nS

SYMBOL

PARAMETER

MIN

MAX

UNITS

V

BR

Reverse Voltage

100

V

T

STG

Storage Temperature

-40

+100

T

O

Operating Temperature Range

-40

+80

T

S

Soldering Temperature*

+260

I

L

Light Current

0.5

mA

*1/16 inch from case for 3 secs max

FEATURES

Photoconductive

High speed

Low cost

Flat top, T1 package

Silicon Photodiode, Blue Enhanced Photoconductive

Type PDB-C131 , with daylight filter Type PDB-C131F

APPLICATIONS

Smoke detectors

Light pen detectors

TV & VCR remotes

IRDA sensor

Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications

are subject to change without notice. *f = 1 MHz, ** daylight filter= 700 - 1100 nm

[FORM NO. 100-PDB-C131 REV A]

in a T1 flat top , water clear plastic housing.

Designed for high speed, low capacitance,

photoconductive applications. The

PDB-C131F includes a daylight filter.

PACKAGE DIMENSIONS INCH [mm]

PHOTONIC

DETECTORS INC.

SPECTRAL RESPONSE

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

QE=100%

WAVELENGTH (nm)

0.152

0.984 [25.00]

L

C

L

C

0.020 [0.51] SQ

2 PLACES

Ø0.118 [3.00]

[3.85]

CATHODE

ANODE

CLEAR PLASTIC

VIEWING

ANGLE

0.100 [2.54]

CHIP POSITION

ACTIVE AREA

SURFACE

Ø0.158 [4.02]

0.039 [1.00] MAX

0.059 [1.50]

0.100 [2.54]

0.030 [0.75]

65°

0.032 [0.81] SQ

0.038 [0.97] SQ

ACTIVE AREA

T 1 FLAT TOP PLASTIC PACKAGE