| 전자부품 데이터시트 검색엔진 |
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FESB16AT 데이터시트(PDF) 2 Page - General Semiconductor |
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FESB16AT 데이터시트(HTML) 2 Page - General Semiconductor |
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2 / 2 page ![]() 0 50 100 150 0 4.0 8.0 12 16 20 1 10 100 0 50 100 150 200 250 300 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 1 10 80 0.1 1 10 100 10 100 1,000 0 20 40 60 80 100 0.1 1 10 100 1,000 FIG. 1 - FORWARD CURRENT DERATING CURVE CASE TEMPERATURE, °C RESISTIVE OR INDUCTIVE LOAD FIG. 4 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS INSTANTANEOUS FORWARD VOLTAGE, VOLTS 8.3ms SINGLE HALF SINE WAVE (JEDEC Method) TC=100°C FIG. 2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT REVERSE VOLTAGE, VOLTS TJ=25 °C f=1.0 MHZ NUMBER OF CYCLES AT 60 HZ TJ =125°C FIG. 5 - TYPICAL JUNCTION CAPACITANCE TJ = 25°C PULSE WIDTH = 300 µs 1% DUTY CYCLE 50-200V 300-400V 500-600V 50-400V 500-600V FIG. 3 - TYPICAL REVERSE CHARACTERISTICS TJ =100°C PERCENT OF RATED PEAK REVERSE VOLTAGE, % TJ=25°C TJ=25°C 300-600V 50-200V RATINGS AND CHARACTERISTICS CURVES FESB16AT THRU FESB16JT |
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