NSVBAT54SWT1G datasheet(1/4 Pages) ONSEMI

부품명	NSVBAT54SWT1G

상세설명	Dual Series Schottky Barrier Diodes

PDF	4 Pages

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 Semiconductor Components Industries, LLC, 2011

November, 2011 − Rev. 10

Publication Order Number:

BAT54SWT1/D

1

BAT54SWT1G,

NSVBAT54SWT1G

Dual Series Schottky

Barrier Diodes

These Schottky barrier diodes are designed for high speed switching

applications, circuit protection, and voltage clamping. Extremely low

forward voltage reduces conduction loss. Miniature surface mount

package is excellent for hand held and portable applications where

space is limited.

Features

 Extremely Fast Switching Speed

 Low Forward Voltage − 0.35 Volts (Typ) @ IF = 10 mAdc

 AEC Qualified and PPAP Capable

 NSV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements

 These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant*

MAXIMUM RATINGS (TJ = 125C unless otherwise noted)

Rating

Symbol

Value

Unit

Reverse Voltage

VR

30

V

Forward Power Dissipation

@ TA = 25C

Derate above 25C

PF

200

1.6

mW

mW/C

Forward Current (DC)

IF

200 Max

mA

Non−Repetitive Peak Forward Current

tp < 10 msec

IFSM

600

mA

Repetitive Peak Forward Current

Pulse Wave = 1 sec,

Duty Cycle = 66%

IFRM

300

mA

Junction Temperature

TJ

−55 to 125

C

Storage Temperature Range

Tstg

−55 to +150

C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

http://onsemi.com

30 VOLT

DUAL SERIES SCHOTTKY

BARRIER DIODES

3

CATHODE/ANODE

1

ANODE

2

CATHODE

Device

Package

Shipping†

ORDERING INFORMATION

BAT54SWT1G

SOT−323

(Pb−Free)

3,000 /

Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

SOT−323

CASE 419

STYLE 9

MARKING DIAGRAM

B8M G

G

B8

= Device Code

M

= Date Code*

G

= Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation may vary depending

upon manufacturing location.

1

NSVBAT54SWT1G

SOT−323

(Pb−Free)

3,000 /

Tape & Reel

유사한 부품 번호 - NSVBAT54SWT1G

제조업체	부품명	데이터시트	상세설명
ON Semiconductor	NSVBAT54SWT1G	56Kb / 4P	Dual Series Schottky Barrier Diodes June, 2016 ??Rev. 11
	NSVBAT54SWT1G	170Kb / 5P	Dual Series Schottky Barrier Diodes April, 2019 ??Rev. 12
	NSVBAT54SWT1G	175Kb / 5P	Dual Series Schottky Barrier Diodes December, 2022 - Rev. 13

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유사한 설명 - NSVBAT54SWT1G

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NSVBAT54SWT1G 데이터시트(PDF) 1 Page - ON Semiconductor

NSVBAT54SWT1G 데이터시트(HTML) 1 Page - ON Semiconductor

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