| 전자부품 데이터시트 검색엔진 |
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LL4448 데이터시트(PDF) 2 Page - General Semiconductor |
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LL4448 데이터시트(HTML) 2 Page - General Semiconductor |
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2 / 4 page ![]() ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified LL4448 Rectification Efficiency Measurement Circuit Symbol Min. Typ. Max. Unit Forward Voltage at IF = 5 mA at IF = 100 mA VF VF 0.62 – – – 0.72 1 V V Leakage Current at VR = 20 V at VR = 75 V at VR = 20 V, Tj = 150 °C IR IR IR – – – – – – 25 5 50 nA µA µA Capacitance at VF = VR = 0 Ctot ––4pF Reverse Recovery Time from IF = 10 mA to IR = 1 mA, VR = 6 V, RL = 100 Ω trr ––4ns Thermal Resistance Junction to Ambient Air RthJA ––0.351) K/mW Rectification Efficiency at f = 100 MHz, VRF = 2 V ηv 0.45 – – – 1) Valid provided that electrodes are kept at ambient temperature. |
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