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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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MBR760 데이터시트(PDF) 1 Page - General Semiconductor |
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MBR760 데이터시트(HTML) 1 Page - General Semiconductor |
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1 / 2 page  MBR735 THRU MBR760 SCHOTTKY RECTIFIER Reverse Voltage - 35 to 60 Volts Forward Current - 7.5 Amperes FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 ♦ Metal to silicon rectifier, majority carrier conduction ♦ Low power loss, high efficiency ♦ High current capability, low forward voltage drop ♦ High surge capability ♦ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications ♦ Guardring for overvoltage protection ♦ High temperature soldering guaranteed: 250°C/10 seconds, 0.25" (6.35mm) from case MECHANICAL DATA Case: JEDEC TO-220AC molded plastic body Terminals: Lead solderable per MIL-STD-750, Method 2026 Polarity: As marked Mounting Position: Any Mounting Torque: 5 in. - lbs. max. Weight: 0.08 ounces, 2.24 grams MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. SYMBOLS MBR735 MBR745 MBR750 MBR760 UNITS Maximum repetitive peak reverse voltage VRRM 35 45 50 60 Volts Maximum working peak reverse voltage VRWM 35 45 50 60 Volts Maximum DC blocking voltage VDC 35 45 50 60 Volts Maximum average forward rectified current (SEE FIG 1) I(AV) 7.5 Amps Peak repetitive forward current (square wave, 20 KHZ) at TC=105°C IFRM 15.0 Amps Peak forward surge current, 8.3ms single half sine- wave superimposed on rated load (JEDEC Method) IFSM 150.0 Amps Peak repetitive reverse surge current (NOTE 1) IRRM 1.0 0.5 Amps Maximum instantaneous IF=7.5A, TC=25°C - 0.75 forward voltage at IF=7.5A, TC=125°C VF 0.57 0.65 Volts (NOTE 2) IF=15A, TC=25°C 0.84 - IF=15A, TC=125°C 0.72 - Maximum instantaneous reverse current at rated DC blocking voltage TC=25°C IR 0.1 0.5 mA (NOTE 1) TC=125°C 15.0 50 Voltage rate of change (rated VR) dv/dt 10,000 V/ µs Maximum thermal resistance, (NOTE 3) R ΘJC 3.0 R ΘJA 60.0 °C/W Operating junction temperature range TJ -65 to +150 °C Storage temperature range TSTG -65 to +175 °C NOTES: (1) 2.0 µs, pulse width, f=1.0 KHZ (2) Pulse test: 300 µs pulse width, 1% duty cycle (3) Thermal resistance from junction to case and/or thermal resistance from junction to ambient 4/98 0.154 (3.91) 0.148 (3.74) DIA. 0.113 (2.87) 0.103 (2.62) 0.185 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 0.145 (3.68) 0.135 (3.43) 0.350 (8.89) 0.330 (8.38) 0.160 (4.06) 0.140 (3.56) 0.037 (0.94) 0.027 (0.68) 0.205 (5.20) 0.195 (4.95) 0.560 (14.22) 0.530 (13.46) 0.022 (0.56) 0.014 (0.36) 0.110 (2.79) 0.100 (2.54) 12 1.148 (29.16) 1.118 (28.40) 0.105 (2.67) 0.095 (2.41) 0.410 (10.41) 0.390 (9.91) 0.635 (16.13) 0.625 (15.87) 0.560 (14.22) 0.530 (13.46) PIN PIN 1 PIN 2 CASE 0.415 (10.54) MAX. 0.370 (9.40) 0.360 (9.14) TO-220AC Dimensions in inches and (millimeters) |
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