MBRB1645 datasheet(1/2 Pages) GE

부품명	MBRB1645

상세설명	SCHOTTKY RECTIFIER

PDF	2 Pages

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제조업체	GE [General Semiconductor]

홈페이지	http://www.vishay.com

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1 / 2 page

MBRB1635 THRU MBRB1660

SCHOTTKY RECTIFIER

Reverse Voltage - 35 to 60 Volts

Forward Current - 16.0 Amperes

FEATURES

♦ Plastic package has Underwriters Laboratory

Flammability Classifications 94V-0

♦ Metal silicon junction,

majority carrier conduction

♦ Low power loss, high efficiency

♦ High current capability, low forward voltage drop

♦ High surge capability

♦ Guardring for overvoltage protection

♦ For use in low voltage, high frequency inverters, free

wheeling, and polarity protection applications

♦ High temperature soldering in accordance with

CECC 802 / Reflow guaranteed

MECHANICAL DATA

Case: JEDEC TO-263AB molded plastic body

Terminals: Lead solderable per MIL-STD-750,

Method 2026

Polarity: As marked

Mounting Position:Any

Weight: 0.08 ounce, 2.24 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

SYMBOLS

MBRB1635

MBRB1645

MBRB1650

MBRB1660

UNITS

Maximum repetitive peak reverse voltage

VRRM

35

45

50

60

Volts

Maximum working peak reverse voltage

VRWM

35

45

50

60

Volts

Maximum DC blocking voltage

VDC

35

45

50

60

Volts

Maximum average forward rectified current at TC=125°C

I(AV)

16.0

Amps

Peak repetitive forward current at TC=125°C

(rated VR, sq. wave,20 KHZ)

IFRM

32.0

Amps

Peak forward surge current,

8.3ms single half sine-wave

superimposed on rated load (JEDEC Method)

IFSM

150.0

Amps

Peak repetitive reverse surge current (NOTE 1)

IRRM

1.0

0.5

Amps

Maximum instantaneous forward voltage at: (NOTE 2)

IF=16A, TC=25°C

VF

0.63

0.75

Volts

IF=16A, TC=125°C

0.57

0.65

Maximum instantaneous reverse current at

rated DC blocking voltage

TC= 25°C

IR

0.2

1.0

(NOTE 2)

TC=125°C

40.0

50.0

mA

Voltage rate of change (rated VR)

dv/dt

10,000

V/

µs

Maximum typical thermal resistance (NOTE 3)

R

ΘJC

1.5

°C/W

Operating junction temperature range

TJ

-65 to +150

°C

Storage temperature range

TSTG

-65 to +175

°C

NOTES: (1) 2.0

µs pulse width, f=1.0 KHZ

(2) Pulse test: 300

µs pulse width, 1% duty cycle

(3) Thermal resistance from junction to case

4/98

TO-263AB

Dimensions in inches and (millimeters)

-T-

SEATING

PLATE

0.380 (9.65)

0.420 (10.67)

0.320 (8.13)

0.360 (9.14)

0.575 (14.60)

0.625 (15.88)

0.027 (0.686)

0.037 (0.940)

1

2

0.160 (4.06)

0.190 (4.83)

0.045 (1.14)

0.055 (1.40)

0.018 (0.46)

0.025 (0.64)

0.080 (2.03)

0.110 (2.79)

0.090 (2.29)

0.110 (2.79)

0.245 (6.22)

MIN

- HEATSINK

PIN 1

K

0.095 (2.41)

0.100 (2.54)

K

PIN 2

0.047 (1.19)

0.055 (1.40)

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