MBRB735 datasheet(1/2 Pages) GE

부품명	MBRB735

상세설명	SCHOTTKY RECTIFIER

PDF	2 Pages

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제조업체	GE [General Semiconductor]

홈페이지	http://www.vishay.com

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1 / 2 page

MBRB735 THRU MBRB760

SCHOTTKY RECTIFIER

Reverse Voltage - 35 to 60 Volts

Forward Current - 7.5 Amperes

FEATURES

♦ Plastic package has Underwriters Laboratory

Flammability Classifications 94V-0

♦ Metal silicon junction

majority carrier conduction

♦ Low power loss, high efficiency

♦ High current capability, low forward

voltage drop

♦ High surge capability

♦ For use in low voltage, high frequency inverters, free

wheeling, and polarity protection applications

♦ Guardring for overvoltage protection

♦ High temperature soldering in accordance with

CECC 802 / Reflow guaranteed

MECHANICAL DATA

Case: JEDEC TO-263AB molded plastic body

Terminals: Lead solderable per MIL-STD-750,

Method 2026

Polarity: As marked

Mounting Position: Any

Weight: 0.08 ounces, 2.24 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

SYMBOLS

MBRB735

MBRB745

MBRB750

MBRB760

UNITS

Maximum repetitive peak reverse voltage

VRRM

35

45

50

60

Volts

Maximum working peak reverse voltage

VRWM

35

45

50

60

Volts

Maximum DC blocking voltage

VDC

35

45

50

60

Volts

Maximum average forward rectified current (SEE FIG 1)

I(AV)

7.5

Amps

Peak repetitive forward current (square wave, 20 KHZ)

at TC=105°C

IFRM

15.0

Amps

Peak forward surge current, 8.3ms single half sine-

wave superimposed on rated load (JEDEC Method)

IFSM

150.0

Amps

Peak repetitive reverse surge current (NOTE 1)

IRRM

1.0

0.5

Amps

Maximum instantaneous

IF=7.5A, TC=25°C

-

0.75

forward voltage at

IF=7.5A, TC=125°C

VF

0.57

0.65

Volts

(NOTE 2)

IF=15A, TC=25°C

0.84

-

IF=15A, TC=125°C

0.72

-

Maximum instantaneous reverse current at

rated DC blocking voltage

TC=25°C

IR

0.1

0.5

mA

(NOTE 1)

TC=125°C

15.0

50.0

Voltage rate of change (rated VR)

dv/dt

10,000

1,000

V/

µs

Maximum thermal resistance, (NOTE 3)

R

ΘJC

3.0

°C/W

Operating junction temperature range

TJ

-65 to +150

°C

Storage temperature range

TSTG

-65 to +175

°C

NOTES:

(1) 2.0

µs, pulse width, f=1.0 KHZ

(2) Pulse test: 300

µs pulse width, 1% duty cycle

(3) Thermal resistance from junction to case

4/98

TO-263AB

-T-

SEATING

PLATE

0.380 (9.65)

0.420 (10.67)

0.320 (8.13)

0.360 (9.14)

0.575 (14.60)

0.625 (15.88)

0.027 (0.686)

0.037 (0.940)

1

2

0.160 (4.06)

0.190 (4.83)

0.045 (1.14)

0.055 (1.40)

0.018 (0.46)

0.025 (0.64)

0.080 (2.03)

0.110 (2.79)

0.090 (2.29)

0.110 (2.79)

0.245 (6.22)

MIN

- HEATSINK

PIN 1

K

0.095 (2.41)

0.100 (2.54)

K

PIN 2

0.047 (1.19)

0.055 (1.40)

Dimensions in inches and (millimeters)

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