GD1SS355 datasheet(1/2 Pages) ETL

부품명	GD1SS355

상세설명	S U R F A C E M O U N T, S WI T C H I N G D I O D E V O LTAG E 9 0 V, C U R R E N T 0 . 1 A

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제조업체	ETL [E-Tech Electronics LTD]

홈페이지	http://e-tech.com.hk

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ISSUED DATE :2004/09/20

REVISED DATE :

G

G D

D 11S

S S

S 335555

S

S U

U R

R F

F A

A C

C E

E M

M O

O U

U N

N T

T ,, S

S W

W II T

T C

C H

H II N

N G

G D

D II O

O D

D E

E

V O L T A G E 9 0 V, C U R R E N T 0 . 1 A

Description

The GD1SS355 is designed for ultra high speed switching and high reliability with high surge current handling capability.

Package Dimensions

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

0.85

1.05

A1

0

0.10

L

0.20

0.40

A2

0.80

1.00

b

0.25

0.40

D

1.15

1.45

c

0.10

0.18

E

1.60

1.80

HE

2.30

2.70

Q1

0.15 BSC.

:

Parameter

Symbol

Ratings

Unit

Junction Temperature

Tj

+125

Storage Temperature

Tstg

-55 ~ +125

Maximum Peak Repetitive Reverse Voltage

VRRM

90

V

Maximum RMS Voltage

VRMS

63

V

Maximum DC Blocking Voltage

VDC

80

V

Peak Forward Surge Current at 8.3mSec single half sine-wave

IFSM

0.5

A

Typical Junction Capacitance between Terminal (Note 1)

CJ

3.0

pF

Maximum Reverse Recovery Time (Note2)

TRR

4.0

nSec

Maximum Average Forward Rectified Current

Io

0.1

A

Total Power Dissipation

PD

225

mW

Characteristics at Ta = 25 ::::

Characteristics

Symbol

Max

Unit

Test Condition

Maximum Instantaneous Forward Voltage

VF

1.20

V

IF = 100mA

Maximum Average Reverse Current

IR

0.1

uA

VR = 80V

Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 6.0 volt.

2. Measured at applied forward current of 10mA and reverse voltage of 6.0 volt.

3. ESD sensitive product handling required.

유사한 부품 번호 - GD1SS355

제조업체	부품명	데이터시트	상세설명
GTM CORPORATION	GD1SS355	148Kb / 2P	SURFACE MOUNT,SWITCHING DIODE

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유사한 설명 - GD1SS355

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GD1SS355 데이터시트(PDF) 1 Page - E-Tech Electronics LTD

GD1SS355 데이터시트(HTML) 1 Page - E-Tech Electronics LTD

유사한 부품 번호 - GD1SS355

유사한 설명 - GD1SS355

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