| 전자부품 데이터시트 검색엔진 |
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2SC2612 데이터시트(PDF) 3 Page - Hitachi Semiconductor |
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2SC2612 데이터시트(HTML) 3 Page - Hitachi Semiconductor |
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3 / 7 page ![]() 2SC2612 3 Collector Current Derating Rate Case temperature TC (°C) IS/B Limit Area 100 80 60 40 20 0 50 100 150 Transient Thermal Resistance 10 ms–10 s 10 µs–10 ms 10 3 1.0 0.3 0.1 0.03 0.01 0.01 0.1 1.0 10 (s) 0.01 0.1 1.0 10 (ms) Time t TC = 25°C Reverse Bias Area of Safe Operation 10 8 6 4 2 0 100 IB2 = –0.6 A 350 V, 6 A 400 V, 3 A 450 V, 0.5 A 200 300 400 500 Collector to emitter voltage VCE (V) Collector to Emitter Voltage vs. Base to Emitter Resistance 600 IC = 1 mA 500 400 300 100 1 k Base to emitter resistance RBE (Ω) 10 k 100 k 1 M |
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