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2SC3413 데이터시트(PDF) 2 Page - Hitachi Semiconductor

부품명 2SC3413
상세설명  Silicon NPN Epitaxial
PDF  5 Pages
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제조업체  HITACHI [Hitachi Semiconductor]
홈페이지  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

2SC3413 데이터시트(HTML) 2 Page - Hitachi Semiconductor

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2SC3413
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
40
V
Collector to emitter voltage
V
CEO
30
V
Emitter to base voltage
V
EBO
5V
Collector current
I
C
100
mA
Collector power dissipation
P
C
300
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
40
——V
I
C = 10 µA, IE = 0
Collector to emitter breakdown
voltage
V
(BR)CEO
30
——V
I
C = 1 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
5
——V
I
E = 10 µA, IC = 0
Collector cutoff current
I
CBO
—
—
0.5
µAV
CB = 18 V, IE = 0
Emitter cutoff current
I
EBO
—
—
0.5
µAV
EB = 2 V, IC = 0
DC current transfer ratio
h
FE*
1
100
—
500
V
CE = 12 V, IC = 2 mA
Base to emitter voltage
V
BE
—
—
0.75
V
V
CE = 12 V, IC = 2 mA
Collector to emitter saturation
voltage
V
CE(sat)
—
—
0.2
V
I
C = 10 mA, IB = 1 mA
Gain bandwidth product
f
T
—
200
—
MHz
V
CE = 12 V, IC = 2 mA
Collector output capacitance
Cob
—
—
3.5
pF
V
CB = 10 V, IE = 0, f = 1 MHz
Noise figure
NF
—
1.0
5.0
dB
V
CE = 6 V, IC = 0.1 mA,
R
g = 1 kΩ, f = 1 kHz
Note:
1. The 2SC3413 is grouped by h
FE as follows.
BC
D
100 to 200
160 to 320
250 to 500
See characteristic curves of 2SC458(LG).



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