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STB46NF30 데이터시트(PDF) 5 Page - STMicroelectronics

부품명 STB46NF30
상세설명  N-channel 300 V, 0.063 廓 typ, 42 A, STripFET??II Power MOSFET in D2PAK, TO-220 and TO-247 packages
PDF  19 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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STB46NF30 데이터시트(HTML) 5 Page - STMicroelectronics

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STB46NF30, STP46NF30, STW46NF30
Electrical characteristics
Doc ID 018493 Rev 1
5/19
Table 7.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area.
Source-drain current
Source-drain current
(pulsed)
-
34
136
A
A
VSD
(2)
2.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage
ISD = 34 A, VGS = 0
-
1.6
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 34 A,
di/dt = 100 A/µs,
VDD = 60 V
(see Figure 18)
-
215
1.7
16
ns
nC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 34 A,
di/dt = 100 A/µs,
VDD = 60 V, Tj = 150 °C
(see Figure 18)
-
252
2.3
19
ns
nC
A



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