STPS2H100UF datasheet(2/12 Pages) STMICROELECTRONICS

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Characteristics

STPS2H100

2/12

DocID6115 Rev 8

Characteristics

To evaluate the conduction losses use the following equation:

P = 0.56 x IF(AV) + 0.045 IF

(RMS)

Table 2. Absolute ratings (limiting values -Tamb = 25° C unless otherwise stated)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

100

IF(AV)

Average forward current

SMA / SMB

TL = 130 °C  = 0.5

SMAflat

TL = 145 °C  = 0.5

SMBflat

TL = 150 °C  = 0.5

IFSM

Surge non repetitive forward current

tp =10 ms sinusoidal

PARM

Repetitive peak avalanche power

tp = 1 µs Tj = 25 °C

2400

Tstg

Storage temperature range

-65 to + 175

°C

Maximum operating junction temperature (1)

175

°C

condition to avoid thermal runaway for a diode on its own heatsink

dPtot

dTj

Rth(j-a)

Table 3. Thermal resistance

Symbol

Parameter

Value

Unit

Rth(j-l)

Junction to lead

SMA

°C/W

SMAflat

SMB

SMBflat

Table 4. Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

1µA

Tj = 125 °C

0.4

(2)

Forward voltage drop

Tj = 25 °C

IF = 2 A

0.79

Tj = 125 °C

0.6

0.65

Tj = 25 °C

IF = 4 A

0.88

Tj = 125 °C

0.69

0.74

Pulse test: tp = 5 ms,  < 2%

Pulse test: tp = 380 µs,  < 2%

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