전자부품 데이터시트 검색엔진
  Korean  ▼
ALLDATASHEET.CO.KR

X  

Preview PDF HTML

2SC458 데이터시트(PDF) 2 Page - Hitachi Semiconductor

부품명 2SC458
상세설명  Silicon NPN Epitaxial
PDF  9 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
제조업체  HITACHI [Hitachi Semiconductor]
홈페이지  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

2SC458 데이터시트(HTML) 2 Page - Hitachi Semiconductor

  2SC458 Datasheet HTML 1Page - Hitachi Semiconductor 2SC458 Datasheet HTML 2Page - Hitachi Semiconductor 2SC458 Datasheet HTML 3Page - Hitachi Semiconductor 2SC458 Datasheet HTML 4Page - Hitachi Semiconductor 2SC458 Datasheet HTML 5Page - Hitachi Semiconductor 2SC458 Datasheet HTML 6Page - Hitachi Semiconductor 2SC458 Datasheet HTML 7Page - Hitachi Semiconductor 2SC458 Datasheet HTML 8Page - Hitachi Semiconductor 2SC458 Datasheet HTML 9Page - Hitachi Semiconductor  
Zoom Inzoom in Zoom Outzoom out
 2 / 9 page
background image
2SC458 (K)
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
30
V
Collector to emitter voltage
V
CEO
30
V
Emitter to base voltage
V
EBO
5V
Collector current
I
C
100
mA
Emitter current
I
E
–100
mA
Collector power dissipation
P
C
200
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
30
—
—
V
I
C = 10 µA, IE = 0
Collector to emitter breakdown
voltage
V
(BR)CEO
30
—
—
V
I
C = 1 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
5—
—
V
I
E = 10 µA, IC = 0
Collector cutoff current
I
CBO
—
—
0.5
µAV
CB = 18 V, IE = 0
Emitter cutoff current
I
EBO
—
—
1.0
µAV
EB = 4 V, IC = 0
DC current transfer ratio
h
FE*
1
100
—
500
V
CE = 1 V, IC = 10 mA
Collector to emitter saturation
voltage
V
CE(sat)
—
—
0.4
V
I
C = 10 mA, IB = 1 mA
Base to emitter voltage
V
BE(sat)
—
—
1.0
V
I
C = 10 mA, IB = 1 mA
Gain bandwidth product
f
T
100
—
—
MHz
V
CE = 10 V, IC = 10 mA
Collector output capacitance
Cob
—
—
4
pF
V
CB = 10 V, IE = 0, f = 1 MHz
Turn on time
t
on
—
80
—
ns
I
C = 10 IB1 = –10 IB2 = 10 mA,
V
CC = 10 V
Turn off time
t
off
—
300
—
ns
Storage time
t
stg
—
260
—
ns
I
C = IB1 = –IB2 = 20 mA,
V
CC = 5 V
Note:
1. The 2SC458 (K) is grouped by h
FE as follows.
BC
D
100 to 200
160 to 320
250 to 500



Html Pages

1 2 3 4 5 6 7 8 9


데이터시트 다운로드

Go To PDF Page


링크 URL



ALLDATASHEET 가 귀하에 도움이 되셨나요?  [ DONATE ] 

Alldatasheet는?   |   광고문의   |   운영자에게 연락하기   |   개인정보취급방침   |   링크 투 데이터시트    |   링크교환   |   제조사별 검색
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com