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2SC5544 데이터시트(PDF) 2 Page - Hitachi Semiconductor

부품명 2SC5544
상세설명  Silicon NPN Epitaxial VHF / UHF wide band amplifier
PDF  8 Pages
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제조업체  HITACHI [Hitachi Semiconductor]
홈페이지  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

2SC5544 데이터시트(HTML) 2 Page - Hitachi Semiconductor

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2SC5544
2
Absolute Maximum Ratings (Ta = 25
°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
15
V
Collector to emitter voltage
V
CEO
8V
Emitter to base voltage
V
EBO
1.5
V
Collector current
I
C
50
mA
Collector power dissipation
Pc
80
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Collector to base breakdown
voltage
V
(BR)CBO
15
——V
I
C = 10µA , IE = 0
Collector cutoff current
I
CBO
——
1
µAV
CB = 12V , IE = 0
Collector cutoff current
I
CEO
——
1
mA
V
CE = 8V , RBE = ∞
Emitter cutoff current
I
EBO
——
10
µAV
EB = 1.5V , IC = 0
DC current transfer ratio
h
FE
85
—
170
V
V
CE = 1V , IC = 5mA
Collector output capacitance
Cob
—
0.88
1.4
pF
V
CB = 1V , IE = 0
f = 1MHz
Gain bandwidth product
f
T
3
6
—
GHz
V
CE = 1V , IC = 5mA
Power gain
PG
8
11.6
—
dB
V
CE = 1V, IC = 5mA
f = 900MHz
Noise figure
NF
—
1.0
2.0
dB
V
CE = 1V, IC = 5mA
f = 900MHz



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