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FEATURES 

LOW DRIFT 

ULTRA LOW LEAKAGE 

LOW PINCHOFF 

ABSOLUTE MAXIMUM RATINGS  

@ 25°C (unless otherwise noted) 

Maximum Temperatures 

Storage Temperature ‐65°C to +150°C 

Operating Junction Temperature 

+150°C 

Maximum Voltage and Current for Each Transistor – Note 1 

Gate Voltage to Drain or Source 

40V 

Drain to Source Voltage 

40V 

Gate Forward Current 

10mA 

Gate Reverse Current 

10µA 

Maximum Power Dissipation 

Device Dissipation @ Free Air – Total                 40mW @ +125°C 

MATCHING CHARACTERISTICS @ 25°C UNLESS OTHERWISE NOTED

SYMBOL 

CHARACTERISTICS 

VALUE 

UNITS 

CONDITIONS 

DRIFT VS. 

TEMPERATURE 

5 

µV/°C 

OFFSET VOLTAGE 

5 

mV 

ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)

SYMBOL 

CHARACTERISTICS 

MIN. 

TYP. 

MAX. 

UNITS 

CONDITIONS 

Breakdown Voltage 

40 

60 

‐‐ 

V 

Gate‐To‐Gate Breakdown 

40 

‐‐ 

‐‐ 

V 

 

TRANSCONDUCTANCE 

Full Conduction 

 

70 

 

300 

 

500 

 

µmho 

 

VDG= 10V         VGS= 0V      f = 1kHz 

Typical Operation 

50 

100 

200 

µmho 

     VDG= 10V         ID= 30µA      f = 1kHz 

Mismatch 

‐‐ 

1 

5 

%  

 

DRAIN CURRENT 

Full Conduction 

 

60 

 

400 

 

1000 

 

µA 

 

VDG= 10V              VGS= 0V 

Mismatch at Full Conduction 

‐‐ 

2 

5 

%  

 

GATE VOLTAGE 

Pinchoff voltage 

 

0.6 

 

2 

 

4.5 

 

V 

 

Operating Range 

‐‐ 

‐‐ 

4 

V 

 

GATE CURRENT 

Operating 

 

‐‐ 

 

‐‐ 

 

1 

 

pA 

 

High Temperature 

‐‐ 

‐‐ 

1 

nA 

 

At Full Conduction 

‐‐ 

‐‐ 

2 

pA 

High Temperature 

‐‐ 

‐‐ 

5 

nA 

Gate‐to‐Gate Leakage 

‐‐ 

1 

‐‐ 

pA 

 

OUTPUT CONDUCTANCE 

Full Conduction 

 

‐‐ 

 

‐‐ 

 

5 

 

 

µmho 

 

 

Operating 

‐‐ 

0.1 

0.1 

Differential 

‐‐ 

0.01 

0.1 

 

CMR 

COMMON MODE REJECTION 

 

‐‐ 

 

90 

 

‐‐ 

 

dB 

 

 

‐‐ 

90 

‐‐ 

 

NF 

NOISE 

Figure 

 

‐‐ 

 

‐‐ 

 

1 

 

dB 

f= 100Hz           NBW= 6Hz 

Voltage 

‐‐ 

20 

70 

nV/√Hz 

 

CAPACITANCE 

Input 

 

‐‐ 

 

‐‐ 

 

3 

 

 

pF 

 

 

Reverse Transfer 

‐‐ 

‐‐ 

1.5 

Drain‐to‐Drain 

‐‐ 

‐‐ 

0.1 

2N5906

LOW NOISE, LOW DRIFT

MONOLITHIC DUAL

N-CHANNEL JFET

Note 1 – These ratings are limiting values above which the serviceability of any semiconductor may be impaired

TO-78 (Bottom View)

Available Packages:

2N5906 in TO-78

2N5906 available as bare die

Micross Components Europe

Tel: +44 1603 788967

2N5906 Benefits:

Tight Tracking

Good matching

Ultra Low Leakage

Low Drift

The 2N5906 is a high-performance monolithic dual

JFET featuring tight matching and low drift over

temperature specifications, and is targeted for use in a

wide range of precision instrumentation applications

where tight tracking is required.

The hermetically sealed TO-78 package is well suited

for hi-reliability and harsh environment applications.

(See Packaging Information).