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ST47P06D 데이터시트(PDF) 2 Page - Stanson Technology

부품명 ST47P06D
상세설명  P Channel Enhancement Mode MOSFET
PDF  8 Pages
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제조업체  STANSON [Stanson Technology]
홈페이지  http://www.stansontech.com
Logo STANSON - Stanson Technology

ST47P06D 데이터시트(HTML) 2 Page - Stanson Technology

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ST47P06D
P Channel Enhancement Mode MOSFET
-47.0A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2009, Stanson Corp.
ST47P06D 2010. V1
ELECTRICAL CHARACTERISTICS
( Ta = 25
Unless otherwise noted )
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Static
Drain-Source
Breakdown Voltage
V(BR)DSS
VGS=0V,ID=-250mA
-60
V
Gate Threshold
Voltage
VGS(th)
VDS=VGS,ID=-250uA
-1.0
-3.0
V
Gate Leakage Current
IGSS
VDS=0V,VGS=±20V
±100
nA
Zero Gate Voltage
Drain Current
IDSS
VDS=-60V,VGS=0V
-1
uA
VDS=-48V,VGS=0V
TJ=125
-10
Drain-source On-
Resistance
RDS(on)
VGS=-10V,ID=-24A
VGS=-4.5V,ID=-10A
22
30
29
41
m
Forward
Transconductance
gfs
VDS=-30V,ID=-10A
21
S
Diode Forward Voltage
VSD
IS=-47A,VGS=0V
-4.0
V
Dynamic
Total Gate Charge
Qg
VDS=-48V
RG=25
ID≡-47A
85
112
nC
Gate-Source Charge
Qgs
1.6
Gate-Drain Charge
Qgd
4.3
Input Capacitance
Ciss
VDS =-25V
VGS=0V
F=1.0MHz
2800
3600
pF
Output Capacitance
Coss
1300
1700
Reverse
TransferCapacitance
Crss
320
420
Turn-On Time
td(on)
tr
VDD=-30V
RG= 25
ID=-23.5A
52
110
nS
460
912
Turn-Off Time
td(off)
tf
100
210
195
400



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