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UC3845L-S08-R 데이터시트(PDF) 3 Page - E-Tech Electronics LTD

부품명 UC3845L-S08-R
상세설명  HIGH PERFORMANCE CURRENT MODE PWM CONTROLLERS
PDF  6 Pages
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제조업체  ETL [E-Tech Electronics LTD]
홈페이지  http://e-tech.com.hk
Logo ETL - E-Tech Electronics LTD

UC3845L-S08-R 데이터시트(HTML) 3 Page - E-Tech Electronics LTD

  UC3845L-S08-R Datasheet HTML 1Page - E-Tech Electronics LTD UC3845L-S08-R Datasheet HTML 2Page - E-Tech Electronics LTD UC3845L-S08-R Datasheet HTML 3Page - E-Tech Electronics LTD UC3845L-S08-R Datasheet HTML 4Page - E-Tech Electronics LTD UC3845L-S08-R Datasheet HTML 5Page - E-Tech Electronics LTD UC3845L-S08-R Datasheet HTML 6Page - E-Tech Electronics LTD  
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UC3844/45
LINEAR INTEGRATED CIRCUIT
UNISONICTECHNOLOGIESCO.,LTD
3 of 6
www.unisonic.com.tw
QW-R103-010.E
ABSOLUTE MAXIMUM RATINGS (TA=25℃)
PARAMETER
SYMBOL
RATINGS
UNIT
Total Power Supply and Zener Current
(ICC+Iz)
30
mA
Output Current, Source or Sink (Note 2)
IOUT
1.0
A
Output Energy (Capacitive Load per cycle)
W
5.0
μJ
Current Sense and Voltage feedback Inputs
VIN
-0.3 ~ +5.5
V
Error Amp Output Sink Current
ISINK
10
mA
Power Dissipation
SOP-8
PD
862
mW
DIP-8
1250
mW
Junction Temperature
TJ
+150
℃
Operation Temperature
TOPR
0 ~ 70
℃
Storage Temperature
TSTG
-65 ~ +150
℃
Note:1.Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2.Maxmum package power dissipation limits must be observed.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
SOP-8
θJA
145
℃
/W
DIP-8
100
℃
/W
ELECTRICAL CHARACTERISTICS
(TA=25℃, VCC=15V, RT=10k, CT=3.3nF, 0℃ ≤ TA ≤ 70℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
REFERENCE SECTION
Reference Output Voltage
VREF
IOUT=1.0mA,TJ=25℃
4.9
5.0
5.1
V
Line Regulation
△
VOUT
VCC=12V ~ 25V
2.0
20
mV
Load Regulation
△
VOUT
IOUT=1.0mA ~ 20mA
3.0
25
mV
Temperature Stability
tS
0.2
mV/℃
Total Output Variation over Line,
Load, Temperature
VREF
4.82
5.18
V
Output Noise Voltage
eN
f=10Hz ~ kHz, TJ=25℃
50
μV
Long Term Stability
S
TA=125℃ for 1000 Hours
5
mV
Output Short Circuit Current
ISC
-30
-85
-180
mA
OSCILLATOR SECTION
Oscillator Voltage Swing
VOSC
1.6
V
Discharge Current
IDSG
VOSC=2.0V, TJ=25℃
10.8
mA
Frequency
fOSC
TJ=25℃
47
52
57
kHz
0
°C ≤ TA ≤ 70℃
46
60
Frequency Change with Voltage
ΔfOSC/ΔV
VCC=12V ~ 25V
0.2
1.0
%
Frequency Change with Temperature
ΔfOSC/ΔT
0
°C ≤ TA ≤ 70℃
5.0
%
ERROR AMPLIFIER SECTION
Voltage Feedback Input
VFB
VOUT=2.5V
2.42
2.50
2.58
V
Output Voltage Swing
High
VOH
RL=15k to ground, VFB=2.3V
5.0
6.2
V
Low
VOL
RL=15k to VREF, VFB=2.7V
0.8
1.1
Output Current
Sink
ISINK
VOUT=1.1V, VFB=2.7V
2.0
12
mA
Source
ISOURCE
VOUT=5.0V, VFB=2.3V
-0.5
-1.0
Input Bias Current
II(BIAS)
VFB=2.7V
-0.1
-2.0
μA
Open Loop Voltage Gain
GVO
VOUT=2.0V ~ 4.0V
65
90
dB
Power Supply Rejection Ratio
PSRR
VCC=12V ~ 25V
60
70
dB
Unity Gain Bandwidth
GBW
TJ=25℃
0.7
1.0
MHz



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