IXYS reserves the right to change limits, test conditions, and dimensions.

IXTA4N60P IXTP4N60P

IXTU4N60P IXTY4N60P

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

2.8

4.6

S

C

iss

635

pF

C

oss

V

65

pF

C

rss

5.7

pF

t

d(on)

25

ns

t

r

V

10

ns

t

d(off)

R

50

ns

t

f

20

ns

Q

g(on)

13.0

nC

Q

gs

V

6.0

nC

Q

gd

4.0

nC

R

thJC

1.41

°C/W

R

thCS

(TO-220)

0.25

°C/W

Source-Drain Diode

Characteristic Values

(T

Symbol

Test Conditions

Min.

Typ.

Max.

I

S

V

4

A

I

SM

Repetitive

12

A

V

SD

I

1.5

V

Pulse test, t

≤ 300 μs, duty cycle d ≤ 2 %

t

rr

I

500

ns

-di/dt = 100 A/

μs

TO-263 (IXTA) Outline

TO-220 (IXTP) Outline

Pins:

1 - Gate

2 - Drain

3 - Source

4 - Drain

TO-251 (IXTU) Outline

Dim.

Millimeter

Inches

Min.

Max.

Min.

Max.

A

2.19

2.38

.086

.094

A1

0.89

1.14

0.35

.045

b

0.64

0.89

.025

.035

b1

0.76

1.14

.030

.045

b2

5.21

5.46

.205

.215

c

0.46

0.58

.018

.023

c1

0.46

0.58

.018

.023

D

5.97

6.22

.235

.245

E

6.35

6.73

.250

.265

e

2.28

BSC

.090

BSC

e1

4.57

BSC

.180

BSC

H

17.02

17.78

.670

.700

L

8.89

9.65

.350

.380

L1

1.91

2.28

.075

.090

L2

0.89

1.27

.035

.050

1. Gate

2. Drain

3. Source

4. Drain

IXYS MOSFETs and IGBTs are covered by 4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

one or moreof the following U.S. patents:

4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2

6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537