Parameter

Symbo

l

Typ

Unit

3P4MH

3P6MH

Repetitive peak off-state

voltages

V

DRM

V

RRM

400

600

V

RMS on-state current

I

T(RMS)

4.7

A

Non-repetitive peak

on-state current

I

TSM

65

A

Max. Operating Junction

Temperature

T

j

110

Storage Temperature

T

stg

-45~150

3P4MH 3P6MH

GENERAL DESCRIPTION

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Repetitive peak off-state voltages

V

DRM

V

RRM

—

400

~600

—

V

RMS on-state current

I

T(RMS)

full sine wave; T

—

4.7

—

A

On-state voltage

V

TM

I

—

—

1.6

V

Holding current

I

H

V

—

1.0

5.0

mA

Gate trigger current

I

GT

V

—

—

0.2

mA

Gate trigger voltage

V

GT

V

—

—

0.8

V

Triacs sensitive gate

Passivated thyristors in a plastic envelope, intended for use in

applications requiring high bidirectional blocking voltage capability

and high thermal cycling performance. Typical applications include

motor control, industrial domestic lighting, heating and staticand

switching.

Product specification

TO-202

ABSOLUTE MAXIMUM RATINGS

ELECTRICAL CHARACTERISTICS

( Ta = 25 C)

O

( Ta = 25 C)

O

TIGER ELECTRONIC CO.,LTD