HAF1002S datasheet(2/5 Pages) HITACHI

2 / 5 page

HAF1002(L), HAF1002(S)

Absolute Maximum Ratings (Ta = 25

°C)

Item

Symbol

Ratings

Unit

Drain to source voltage

DSS

–60

Gate to source voltage

GSS+

–16

Gate to source voltage

GSS–

Drain current

–15

Drain peak current

D(pulse)

Note1

–30

Body-drain diode reverse drain current I

–15

Channel dissipation

Pch

Note2

Channel temperature

Tch

150

°C

Storage temperature

Tstg

–55 to +150

°C

Note:

1. PW

≤ 10µs, duty cycle ≤ 1 %

2. Value at Tc = 25

°C

Typical Operation Characteristics

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Input voltage

–3.5

—

–1.2

Input current

IH1

—

–100

µA

Vi = –8V, V

DS = 0

(Gate non shut down)

IH2

—

–50

µA

Vi = –3.5V, V

DS = 0

——

–1

µA

Vi = –1.2V, V

DS = 0

Input current

IH(sd)1

—

–0.8

—

Vi = –8V, V

DS = 0

(Gate shut down)

IH(sd)2

—

–0.35

—

Vi = –3.5V, V

DS = 0

Shut down temperature

—

175

—

°C

Channel temperature

Gate operation voltage

–3.5

—

–13

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