SSF1020A datasheet(1/5 Pages) SILIKRON

부품명	SSF1020A

상세설명	Advanced trench process technology

PDF	5 Pages

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제조업체	SILIKRON [Silikron Semiconductor Co.,LTD.]

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©Silikron Semiconductor CO.,LTD

2009.12.13

Version : 1.

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page

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SSF1020A

Absolute Maximum Ratings

Parameter

Max.

Units

ID@Tc=25 ْC Continuous drain current,VGS@10V

60

A

ID@Tc=100ْC Continuous drain current,VGS@10V

50

IDM

Pulsed drain current ①

240

PD@TC=25ْC Power dissipation

1

20

W

Linear derating factor

2.0

W/ ْC

VGS

Gate-to-Source voltage

±20

V

EAS

Single pulse avalanche energy ②

240

mJ

EAR

Repetitive avalanche energy

TBD

TJ

TSTG

Operating Junction and

Storage Temperature Range

–55 to +1

75

ْC

Thermal Resistance

Parameter

Min.

Typ.

Max.

Units

RθJC

Junction-to-case

—

1.25

—

ْC/W

RθJA

Junction-to-ambient

—

62

Electrical Characteristics @TJ=25 ْC(unless otherwise specified)

Parameter

Min.

Typ.

Max. Units

Test Conditions

BVDSS

Drain-to-Source breakdown voltage

100

—

V

VGS=0V,ID=250μA

RDS(on)

Static Drain-to-Source on-resistance

—16

20

mΩ

VGS=10V,ID=30A

VGS(th)

Gate threshold voltage

2.0

3.0

4.0

V

VDS=VGS,ID=250μA

gfs

Forward transconductance

-

58

—

S

VDS=5V,ID=30A

IDSS

Drain-to-Source leakage current

——

1

μA

VDS=100V,VGS=0V

——

10

VDS=100V,

VGS=0V,TJ=150ْC

IGSS

Gate-to-Source forward leakage

—

100

nA

VGS=20V

SSF1020A TOP View (D2PAK)

ID =60A

BV=100V

Rdson=20mΩ（max.）

Feathers:

Advanced trench process technology

Ultra low Rdson, typical 16mohm

High avalanche energy, 100% test

Fully characterized avalanche voltage and current

Description:

The SSF1020A is a new generation of middle voltage and

high current N–Channel enhancement mode trench power

MOSFET. This new technology increases the device reliability

and electrical parameter repeatability. SSF1020A is

assembled in high reliability and qualified assembly house.

Application:

Power switching application

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