M95512-DF datasheet(35/50 Pages) STMICROELECTRONICS

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M95512-W M95512-R M95512-DR M95512-DF

DC and AC parameters

Table 16. DC characteristics (M95512-W products, device grade 6)

Symbol

Parameter

Test conditions in addition to those defined in

Table 8 (1)

Min.

Max.

Unit

ILI

Input leakage

current

VIN = VSS or VCC

-± 2

µA

ILO

Output leakage

current

S = VCC, voltage applied on Q = VSS or VCC

-± 2

µA

ICC

Supply current

(Read)

C = 0.1 VCC/0.9VCC at 10 MHz, VCC = 2.5 V,

Q = open

-4

C = 0.1 VCC/0.9VCC at 16 MHz, VCC = 5 V, Q = open

ICC0(2)

Supply current

(Write)

During tW, S = VCC, 2.5 V < VCC < 5.5 V

ICC1

Supply current

(Standby Power

mode)

S = VCC, VCC = 2.5 V, VIN = VSS or VCC

-2(3)

µA

S = VCC, VCC = 5.5 V, VIN = VSS or VCC

-3(4)

µA

VIL

Input low voltage

–0.45

0.3 VCC

VIH

Input high voltage

0.7 VCC

VCC+1

VOL

Output low voltage

VCC = 2.5 V and IOL = 1.5 mA or

VCC = 5 V and IOL = 2 mA

-0.4

VOH

Output high

voltage

VCC = 2.5 V and IOH = –0.4 mA or

VCC = 5 V and IOH = –2 mA

0.8 VCC

-V

1. For devices identified by process letter KB.

2. Characterized only, not tested in production.

3. 2 µA for devices from date code 301 (year 2013, W01), 5 µA for previous devices.

4. 3 µA for devices from date code 301 (year 2013, W01), 5 µA for previous devices.

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