SSF3604

Zero Gate Voltage Drain Current

I

V =24V,V =0V

1

μA

DSS

DS

GS

Gate-Body Leakage Current

I

V =±20V,V =0V

±100

nA

GSS

GS

DS

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

V

V =V

GS(th)

DS

1

1.8

3

V

V =4.5V, I

GS

4.2

6.0

mΩ

Drain-Source On-State Resistance

V =10V, I

GS

3.2

4.5

mΩ

Forward Transconductance

g

V =5V,I

FS

DS

50

S

DYNAMIC CHARACTERISTICS (Note4)

Input Capacitance

C

3100

PF

lss

Output Capacitance

550

PF

V =15V,V

Reverse Transfer Capacitance

DS

F=1.0MHz

330

PF

SWITCHING CHARACTERISTICS (Note 4)

Turn-on Delay Time

t

12

nS

d(on)

Turn-on Rise Time

t

9

nS

r

Turn-Off Delay Time

38

nS

V =15V,V =10V,R

Turn-Off Fall Time

DS

GS

7

nS

Total Gate Charge

Q

52

nC

g

Gate-Source Charge

9

nC

V =15V,I

Gate-Drain Charge

DS

12

nC

Body Diode Reverse Recovery Time

T

30

nS

rr

Body Diode Reverse Recovery Charge

Q

25

nC

rr

DRAIN-SOURCE DIODE CHARACTERISTICS

Diode Forward Voltage (Note 3)

V

V =0V,I =2.1A

0.75

1.2

V

SD

GS

S

NOTES:

1.

Repetitive Rating: Pulse width limited by maximum junction temperature.

2.

3.

Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4.

Guaranteed by design, not subject to production testing.

©Silikron Semiconductor CO.,LTD.

2

http://www.silikron.com

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