SSF5506 datasheet(1/8 Pages) SILIKRON

부품명	SSF5506

상세설명	Advanced MOSFET process technology

PDF	8 Pages

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제조업체	SILIKRON [Silikron Semiconductor Co.,LTD.]

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SSF5506

©Silikron Semiconductor CO.,LTD.

2013.08.13

Version : 1.1

page 1 of 8

www.silikron.com

Main Product Characteristics:

Features and Benefits:

Description:

Absolute max Rating:

Symbol

Parameter

Max.

Units

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10V①

140

A

ID @ TC = 100°C

Continuous Drain Current, VGS @ 10V①

100

IDM

Pulsed Drain Current②

520

PD @TC = 25°C

Power Dissipation③

220

W

Linear Derating Factor

1.5

W/°C

VDS

Drain-Source Voltage

55

V

VGS

Gate-to-Source Voltage

± 20

V

EAS

Single Pulse Avalanche Energy @ L=0.3mH②

735

mJ

IAR

Avalanche Current @ L=0.3mH②

70

A

TJ TSTG

Operating Junction and Storage Temperature Range

-55 to + 175

°C

VDSS

55V

RDS(on)

3.8mΩ(typ.)

ID

140A

TO-220

Marking and pin

Assignment

Schematic diagram

Advanced MOSFET process technology

Special designed for PWM, load switching and

general purpose applications

Ultra low on-resistance with low gate charge

Fast switching and reverse body recovery

175℃ operating temperature

It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with

high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable

device for use in power switching application and a wide variety of other applications

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