Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.

May. 2014. Rev. 2.0

Features

■ High ruggedness

■ R

■ Gate Charge (Typical 6.8 nC)

■ Improved dv/dt Capability

■ 100% Avalanche Tested

N-channel I-PAK/TO-92 MOSFET

Absolute maximum ratings

Thermal characteristics

Symbol

Parameter

Value

Unit

TO-251

TO-92

R

thjc

Thermal resistance, Junction to case

1.9

30.1

R

thjcs

Thermal resistance, Case to Sink

R

thja

Thermal resistance, Junction to ambient

90

113.5

1/6

BV

I

D

: 1A

R

1

2

3

SW1N60D

SAMWIN

Item

Sales Type

Marking

Package

Packaging

1

SW I 1N60

SW1N60D

TO-251

TUBE

2

SW C 1N60

SW1N60D

TO-92

TAPE

Order Codes

Symbol

Parameter

Value

Unit

TO-251

TO-92

V

DSS

Drain to Source Voltage

600

V

I

D

Continuous Drain Current (@T

1*

A

Continuous Drain Current (@T

0.6*

A

I

DM

Drain current pulsed

(note 1)

4

A

V

GS

Gate to Source Voltage

± 30

V

E

AS

Single pulsed Avalanche Energy

(note 2)

68

mJ

E

AR

Repetitive Avalanche Energy

(note 1)

8

mJ

dv/dt

Peak diode Recovery dv/dt

(note 3)

5

V/ns

P

D

Total power dissipation (@T

65.9

4.2

W

0.53

0.03

T

Operating Junction Temperature & Storage Temperature

-55 ~ + 150

T

L

Maximum Lead Temperature for soldering

purpose, 1/8 from Case for 5 seconds.

300

General Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics. This power MOSFET is usually used at high efficient DC to DC

converter block and switch mode power supply.

*. Drain current is limited by junction temperature.

1. Gate 2. Drain 3. Source

1

2

3

TO-251

TO-92

1

2

3