Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.

June. 2014. Rev.2.0

Features

■ High ruggedness

■ R

■ Gate Charge (Typ 9nC)

■ Improved dv/dt Capability

■ 100% Avalanche Tested

General Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics. This power MOSFET is usually used at high efficient DC to DC converter

block and switch mode power supply.

N-channel I-PAK/D-PAK/TO220F MOSFET

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-251 TO-252 TO220F

V

DSS

Drain to Source Voltage

600

V

I

D

Continuous Drain Current (@T

2*

A

Continuous Drain Current (@T

1.3*

A

I

DM

Drain current pulsed

(note 1)

8

A

V

GS

Gate to Source Voltage

± 30

V

E

AS

Single pulsed Avalanche Energy

(note 2)

80

mJ

E

AR

Repetitive Avalanche Energy

(note 1)

11

mJ

dv/dt

Peak diode Recovery dv/dt

(note 3)

5

V/ns

P

D

Total power dissipation (@T

88.7

85.5

17.45

W

0.71

0.68

0.14

T

Operating Junction Temperature & Storage Temperature

-55 ~ + 150

T

L

Maximum Lead Temperature for soldering

purpose, 1/8 from Case for 5 seconds.

300

Thermal characteristics

Symbol

Parameter

Value

Unit

TO-251 TO-252 TO220F

R

thjc

Thermal resistance, Junction to case

1.41

1.46

7.16

R

thcs

Thermal resistance, Case to Sink

R

thja

Thermal resistance, Junction to ambient

90.6

86.6

49.8

1/6

*. Drain current is limited by junction temperature.

BV

I

D

: 2A

R

1. Gate 2. Drain 3. Source

TO-251

SW2N60D

SAMWIN

1

2

3

Order Codes

Item

Sales Type

Marking

Package

Packaging

1

SW I 2N60

SW2N60D

TO-251

TUBE

2

SW D 2N60

SW2N60D

TO-252

REEL

3

SW F 2N60

SW2N60D

TO-220F

TUBE

TO-252

1

2

3

1

2

3

TO-220F

2

1

3