Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.

Feb. 2014. Rev. 1.0

Features

■ High ruggedness

■ R

■ Gate Charge (Typ 103 nC)

■ Improved dv/dt Capability

■ 100% Avalanche Tested

General Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics. It is mainly suitable for half bridge or full bridge resonant topology like a

electronic ballast, and also low power switching mode power appliances.

N-channel TO-3P MOSFET

Absolute maximum ratings

Symbol

Parameter

Value

Unit

V

DSS

Drain to Source Voltage

500

V

I

D

Continuous Drain Current (@T

20*

A

Continuous Drain Current (@T

12.6*

A

I

DM

Drain current pulsed

(note 1)

80

A

V

GS

Gate to Source Voltage

± 30

V

E

AS

Single pulsed Avalanche Energy

(note 2)

2240

mJ

E

AR

Repetitive Avalanche Energy

(note 1)

500

mJ

dv/dt

Peak diode Recovery dv/dt

(note 3)

5

V/ns

P

D

Total power dissipation (@T

386

W

3.1

T

Operating Junction Temperature & Storage Temperature

-55 ~ + 150

T

L

Maximum Lead Temperature for soldering

purpose, 1/8 from Case for 5 seconds.

300

Thermal characteristics

Symbol

Parameter

Value

Unit

R

thjc

Thermal resistance, Junction to case

0.32

R

thcs

Thermal resistance, Case to Sink

0.3

R

thja

Thermal resistance, Junction to ambient

37.1

1/5

BV

I

D

: 20A

R

1

2

3

SW20N50U

SAMWIN

Item

Sales Type

Marking

Package

Packaging

1

SWW 20N50

SW20N50U

TO-3P

TUBE

Order Codes

*. Drain current is limited by junction temperature.

1. Gate 2. Drain 3. Source

1

2

3

TO-3P