SSFN2269

V =-16V,V =0V

-1

μA

Zero Gate Voltage Drain Current

DS

GS

Gate-Body Leakage Current

I

V =±8V,V =0V

±100

nA

GSS

GS

DS

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

V

V =V

GS(th)

DS

-0.4

-0.7

-1

V

V =-4.5V, I

GS

70

90

mΩ

Drain-Source On-State Resistance

V =-2.5V, I

GS

91

120

mΩ

Forward Transconductance

g

V =-5V,I

FS

DS

3

S

DYNAMIC CHARACTERISTICS (Note4)

Input Capacitance

C

530

636

PF

lss

Output Capacitance

100

120

PF

V =-10V,V

Reverse Transfer Capacitance

DS

F=1.0MHz

60

72

PF

SWITCHING CHARACTERISTICS (Note 4)

Turn-on Delay Time

t

6

7.2

nS

d(on)

Turn-on Rise Time

t

12

14.4

nS

r

Turn-Off Delay Time

20

24

nS

V =-10V,I

DD

V =-4.5V,R

Turn-Off Fall Time

GS

6

7.2

nS

Total Gate Charge

Q

5.5

6.6

nC

g

Gate-Source Charge

1.0

1.2

nC

V =-10V,I

Gate-Drain Charge

DS

V =-4.5V

GS

1.5

1.8

nC

DRAIN-SOURCE DIODE CHARACTERISTICS

Diode Forward Voltage (Note 3)

V

V =0V,I =-1A

-1

V

SD

GS

S

NOTES:

1.

Repetitive Rating: Pulse width limited by maximum junction temperature.

2.

3.

Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4.

Guaranteed by design, not subject to production testing.

©Silikron Semiconductor CO.,LTD.

2

http://www.silikron.com

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