| 전자부품 데이터시트 검색엔진 |
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HM628512CLFP-7SL 데이터시트(PDF) 12 Page - Hitachi Semiconductor |
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HM628512CLFP-7SL 데이터시트(HTML) 12 Page - Hitachi Semiconductor |
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12 / 17 page ![]() HM628512C Series 12 Low V CC Data Retention Characteristics (Ta = –20 to +70°C) Parameter Symbol Min Typ Max Unit Test conditions* 3 V CC for data retention V DR 2— —V CS ≥ V CC – 0.2 V, Vin ≥ 0 V Data retention current I CCDR —1* 4 50* 1 µAV CC = 3.0 V, Vin ≥ 0 V CS ≥ V CC – 0.2 V —1* 4 15* 2 µA Chip deselect to data retention time t CDR 0 — — ns See retention waveform Operation recovery time t R t RC* 5 —— ns Notes: 1. For L-version and 20 µA (max.) at Ta = –20 to +40°C. 2. For L-SL-version and 3 µA (max.) at Ta = –20 to +40°C. 3. CS controls address buffer, WE buffer, OE buffer, and Din buffer. In data retention mode, Vin levels (address, WE, OE, I/O) can be in the high impedance state. 4. Typical values are at V CC = 3.0 V, Ta = +25°C and specified loading, and not guaranteed. 5. t RC = read cycle time. Low V CC Data Retention Timing Waveform (CS Controlled) V CC 4.5 V 2.2 V 0 V CS t CDR t R CS ≥ V CC – 0.2 V V DR Data retention mode |
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