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FMMT596 데이터시트(PDF) 2 Page - Zetex Semiconductors |
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FMMT596 데이터시트(HTML) 2 Page - Zetex Semiconductors |
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2 / 6 page ![]() FMMT596 Issue 4 - July 2007 2 www.zetex.com © Zetex Semiconductors plc 2007 Electrical characteristics (Tamb = 25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage V(BR)CBO -220 V IC=-100 A Collector-emitter breakdown voltage V(BR)CEO -200 V IC=-10mA (*) NOTES: (*) Measured under pulsed conditions. Pulse width = 300 s. Duty cycle 2%. Emitter-base breakdown voltage V(BR)EBO -5 V IE=-100 A Collector cut-off current ICBO -100 nA VCB=-200V Emitter cut-off current IEBO -100 nA VEB=-4V Collector-emitter cut-off current ICES -100 nA VCES=-200V Collector-emitter saturation voltage VCE(sat) -0.2 -0.35 V V IC=-100mA, IB=-10mA, IB=-250mA, IB=-25mA(*) Base-emitter saturation voltage VBE(sat) -1.0 V IC=-250mA, IB=-25mA(*) Base-emitter turn-on voltage VBE(on) -0.9 V IC=-250mA, VCE=-10V(*) Static forward current transfer ratio hFE 100 IC=-1mA, VCE=-10V 100 IC=-100mA, VCE=-10V(*) 85 300 IC=-250mA, VCE=-10V(*) 35 IC=-400mA, VCE=-10V(*) Transition frequency fT 150 MHz IC=-50mA, VCE=-10V, f=100MHz Output capacitance Cobo 10 pF VCB=-10V, f=1MHz Switching times td 22 ns IC=-200mA, VCC=-80V Ib1=Ib2=-20mA tr 19 ts 472 tf 70 Switching times td 44 ns IC=-100mA, VCC=-80V Ib1=Ib2=-10mA tr 31 ts 665 tf 76 |
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