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HT23C010 데이터시트(PDF) 1 Page - Holtek Semiconductor Inc |
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HT23C010 데이터시트(HTML) 1 Page - Holtek Semiconductor Inc |
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1 / 8 page ![]() HT23C010 CMOS 128K ×8-Bit Mask ROM Block Diagram Features • Operating voltage: 2.7V~5.5V • Low power consumption – Operation: 25mA Max. (VCC=5V) 10mA Max. (VCC=3V) – Standby: 30 µA Max. (VCC=5V) 10 µA Max. (VCC=3V) • Access time:150ns Max. (VCC=5V) 250ns Max. (VCC=3V) • 131072 ×8 bits of mask ROM • Mask options: chip enable CE/CE/OE1/ OE1B and output enable OE/OE/NC • TTL compatible inputs and outputs • Tristate outputs • Fully static operation • Package type: 28-pin DIP/SOP 32-pin DIP/SOP/PLCC General Description The HT23C010 is a read-only memory with high performance CMOS storage device whose 1024K of memory is arranged into 131072 words by 8 bits. For application flexibility, the chip enable and output enable control pins can be selected as active high or active low. This flexibility not only allows easy interface with most microproc- essors, but also eliminates bus contention in multiple bus microprocessor systems. An addi- tional feature of the HT23C010 is its ability to enter the standby mode whenever the chip en- able (CE/CE) is inactive, thus reducing current consumption to below 30 µA. The combination of these functions makes the chip suitable for high density low power memory applications. 1 24th Aug ’98 |
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