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STF28N60M2 데이터시트(PDF) 1 Page - STMicroelectronics |
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STF28N60M2 데이터시트(HTML) 1 Page - STMicroelectronics |
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1 / 15 page ![]() This is information on a product in full production. January 2014 DocID025255 Rev 2 1/14 STF28N60M2, STFI28N60M2 N-channel 600 V, 0.135 Ω typ., 22 A MDmesh II Plus™ low Qg Power MOSFETs in TO-220FP, I 2 PAKFP packages Datasheet - production data Figure 1. Internal schematic diagram Features • Extremely low gate charge • Lower R DS(on) x area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected Applications • Switching applications • LCC converters, resonant converters Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters. TO-220FP 1 2 3 I PAKFP (TO-281) 2 1 2 3 AM15572v1 Order codes VDS @ TJmax RDS(on) max ID STF28N60M2 650 V 0.150 Ω 22 A STFI28N60M2 Table 1. Device summary Order codes Marking Package Packaging STF28N60M2 28N60M2 TO-220FP Tube STFI28N60M2 I 2 PAKFP (TO-281) www.st.com |
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