| 전자부품 데이터시트 검색엔진 |
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FII40-06D 데이터시트(PDF) 4 Page - IXYS Corporation |
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FII40-06D 데이터시트(HTML) 4 Page - IXYS Corporation |
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4 / 4 page ![]() © 2011 IXYS All rights reserved 4 - 4 20110119a FII 40-06D IXYS reserves the right to change limits, test conditions and dimensions. 0 20 40 60 0 2 4 6 8 0 20 40 60 80 0 20 40 60 0,0 0,5 1,0 1,5 2,0 0 100 200 300 400 0,00001 0,0001 0,001 0,01 0,1 1 10 0,0001 0,001 0,01 0,1 1 10 0 10 20 30 40 50 60 70 80 0,0 0,5 1,0 1,5 2,0 0 100 200 300 400 0 10 20 30 40 50 60 70 80 0 1 2 3 4 20 40 60 80 single pulse V CE = 300V V GE = ±15V R G = 33 T VJ = 125°C VDI...50-06P1 V CE = 300V V GE = ±15V I C = 30A T VJ = 125°C 0 100 200 300 400 500 600 700 0 20 40 60 80 R G = 33 T VJ = 125°C V CE = 300V V GE = ±15V R G = 33 T VJ = 125°C E on t d(on) t r E off t d(off) t f E on t d(on) t r E off t d(off) t f I C A I C A E off E on t t R G R G V CE t s mJ E on mJ E off ns t ns t I CM K/W ZthJC IGBT V A mJ ns ns mJ 25T60 25T60 25T60 25T60 25T60 V CE = 300 V V GE = ±15 V I C = 30 A T VJ = 125°C diode Fig. 7 Typ. turn on energy and switching Fig. 8 Typ. turn off energy and switching times versus collector current times versus collector current Fig. 9 Typ. turn on energy and switching Fig. 10 Typ. turn off energy and switching times versus gate resistor times versus gate resistor Fig. 11 Reverse biased safe operating area Fig. 12 Typ. transient thermal impedance RBSOA |
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