HPMX-3003 datasheet(2/8 Pages) HP

2 / 8 page

7-83

HPMX-3003 Absolute Maximum Ratings[1]

Absolute

Symbol

Parameter

Units

Maximum[1]

LNA

Switch

Power Amp

Pdiss

Power Dissipation[2,3]

250[2,3]

1500[2,3]

CW RF Input Power

dBm

+20

+33

+20

Device Voltage

—

Vcont

Control Voltage

—

-6

—

Tch

Channel Temperature

°C

175

TSTG

Storage Temperature

°C

-65 to 150

Notes:

1. Operation of this device above any of these limits may cause permanent

damage.

2. Tcase = 25°C

3. Derate at 18.2 mW/

°C for T

C > 78°C

Recommended operating range of Vcc = 2.7 to 5.5 V, Ta = -40 to + 85 °C

HPMX-3003 Standard Test Conditions

Unless otherwise stated, all test data was taken on packaged parts

under the following conditions:

Ta= 25 °C, Zo = 50 Ω

Vcc = +3.0 V DC, Vcontrol = -3.0 V DC, VD1 = +3.6 V DC

LNA Pin = -20 dBm, PA Pin = +4 dBm, frequency = 1.9 GHz

Perfomance cited is performance in test circuit shown in Figure 17.

Thermal Resistance[2]:

jc = 55°C/W

HPMX-3003 Guaranteed Electrical Specifications

Standard test conditions apply unless otherwise noted.

Symbol

Parameters and Test Conditions

Units

Min.

Typ.

Max.

Gtest

LNA gain through switch

9.0

Pout

Output power through switch

dBm

24.0

25.5

Id LNA

LNA bias current

6.5

9.5

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