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ILQ2 데이터시트(PDF) 3 Page - Vishay Siliconix |
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ILQ2 데이터시트(HTML) 3 Page - Vishay Siliconix |
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3 / 11 page ![]() ILD1, ILD2, ILD5, ILQ1, ILQ2, ILQ5 www.vishay.com Vishay Semiconductors Rev. 1.8, 28-Jun-11 3 Document Number: 83646 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Note • Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage IF = 60 mA VF 1.25 1.65 V Reverse current VR = 6 V IR 0.01 10 μA Capacitance VR = 0 V, f = 1 MHz CO 25 pF Thermal resistance, junction to lead TthJL 750 K/W OUTPUT Collector emitter capacitance VCE = 5 V, f = 1 MHz CCE 6.8 pF Collector emitter leakage current VVCE = 10 V ICEO 550 nA Saturation voltage, collector emitter IC = 1 mA, IB = 20 μA VCESAT 0.25 0.4 V DC forward current gain VCE = 10 V, IB = 20 μA hFE 200 650 1800 DC forward current gain saturated VCE = 0.4 V, IB = 20 μA hFEsat 120 400 600 Thermal resistance, junction to lead Rthjl 500 K/W COUPLER Capacitance (input to output) VIO = 0 V, f = 1 MHz CIO 0.8 pF CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT IC/IF (collector emitter saturated) IF =10 mA, VCE = 0.4 V ILD1 CTRCEsat 75 % ILQ1 CTRCEsat 75 % ILD2 CTRCEsat 170 % ILQ2 CTRCEsat 170 % ILD5 CTRCEsat 100 % ILQ5 CTRCEsat 100 % IF =10 mA, VCE = 10 V ILD1 CTRCE 20 80 300 % ILQ1 CTRCE 20 80 300 % ILD2 CTRCE 100 200 500 % ILQ2 CTRCE 100 200 500 % ILD5 CTRCE 50 130 400 % ILQ5 CTRCE 50 130 400 % |
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