HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. :HE5908-B

Issued Date : 1998.04.09

Revised Date : 2000.10.01

Page No. : 1/3

HSMC Product Specification

HM14

NPN EPITAXIAL PLANAR TRANSISTOR

Description

The HM14 is a darlington amplifier transistor designed for

applications requiring extremely high current gain.

Features

• High D.C current gain

• HM14 is complementary to HM64

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature ............................................................................................ -55 ~ +150

°C

Junction Temperature ................................................................................... +150

°C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25

°C) ...................................................................................... 1 W

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage ........................................................................................ 30 V

VCES Collector to Emitter Voltage...................................................................................... 30 V

VEBO Emitter to Base Voltage ........................................................................................... 10 V

IC Collector Current ....................................................................................................... 300 mA

°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

30

-

-

V

IC=100uA, IE=0

BVCES

30

-

-

V

IC=100uA, IB=0

BVEBO

10

-

-

V

IE=10uA, IC=0

ICBO

-

-

100

nA

VCB=30V, IE=0

IEBO

-

-

100

nA

VEB=10V, IC=0

*VCE(sat)

-

-

1.5

V

IC=100mA, IB=0.1mA

*VBE(on)

-

-

2

V

VCE=5V, IC=100mA

*hFE1

10K

-

-

VCE=5V, IC=10mA

*hFE2

20K

-

-

VCE=5V, IC=100mA

fT

125

-

-

MHz

VCE=5V, IC=10mA, f=100MHz

*Pulse Test : Pulse Width

≤380us, Duty Cycle≤2%