HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE9512

Issued Date : 1996.04.17

Revised Date : 2001.09.20

Page No. : 1/3

HM64

HSMC Product Specification

HM64

PNP EPITAXIAL PLANAR TRANSISTOR

Description

The HM64 is a darlington amplifier transistor designed for

applications requiring extremely high current gain.

Features

• High D.C current gain

• HM64 is complementary to HM14

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature ............................................................................................ -55 ~ +150

°C

Junction Temperature .................................................................................... +150

°C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25

°C) ....................................................................................... 1 W

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage ........................................................................................ -30 V

VCES Collector to Emitter Voltage ..................................................................................... -30 V

VEBO Emitter to Base Voltage ........................................................................................... -10 V

IC Collector Current ...................................................................................................... -300 mA

°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

-30

-

-

V

IC=-100uA

BVCES

-30

-

-

V

IC=-100uA

BVEBO

-10

-

-

V

IE=-10uA

ICBO

-

-

-100

nA

VCB=-30V

IEBO

-

-

-100

nA

VEB=-10V

*VCE(sat)

-

-

-1.5

V

IC=-100mA, IB=-0.1mA

*VBE(on)

-

-

-2

V

VCE=-5V, IC=-100mA

*hFE1

10

-

-

K

VCE=-5V, IC=-10mA

*hFE2

20

-

-

K

VCE=-5V, IC=-100mA

fT

125

-

-

MHz

VCE=-5V, IC=-10mA

*Pulse Test : Pulse Width

≤380us, Duty Cycle≤2%