HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE9525-B

Issued Date : 1998.01.06

Revised Date : 2000.10.01

Page No. : 1/3

HSMC Product Specification

HM94

PNP EPITAXIAL PLANAR TRANSISTOR

Description

The HM94 is designed for application requires high voltage.

Features

• High voltage: VCEO=400V(min) at IC=1mA

• High current gain: IC=300mA at 25°C

• Complementary with HM44

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature ............................................................................................. -55 ~ +150

°C

Junction Temperature .................................................................................... +150

°C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25

°C) ....................................................................................... 1 W

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage ..................................................................................... -400 V

VCEO Collector to Emitter Voltage .................................................................................. -400 V

VEBO Emitter to Base Voltage ............................................................................................ -6 V

IC Collector Current ..................................................................................................... -500 mA

°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

-400

-

-

V

IC=-100uA

BVCEO

-400

-

-

V

IC=-1mA

BVEBO

6

-

-

V

IE=-10uA

ICBO

-

-

-100

nA

VCB=-400V

IEBO

-

-

-100

nA

VEB=-6V

ICES

-

-

-500

nA

VCE=-400V, VBE=0

*VCE(sat)1

-

-

-350

mV

IC=-1mA, IB=-0.1mA

*VCE(sat)2

-

-

-500

mV

IC=-10mA, IB=-1mA

*VCE(sat)3

-

-

-750

mV

IC=-50mA, IB=-5mA

*VBE(sat)

-

-

-750

mV

IC=-10mA, IB=-1mA

*hFE1

40

-

-

VCE=-10V, IC=-1mA

*hFE2

50

-

300

VCE=-10V, IC=-10mA

*hFE3

45

-

-

VCE=-10V, IC=-50mA

*hFE4

40

-

-

VCE=-10V, IC=-100mA

*Pulse Test : Pulse Width

≤380us, Duty Cycle≤2%