S8050 datasheet(1/2 Pages) MAKOSEMI

부품명	S8050

상세설명	SOT-23 Plastic-Encapsulate Transistors

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MAKO SEMICONDUCTOR CO.,LIMITED

SOT-23 Plastic-Encapsulate Transistors

S8050 TRANSI STOR (NPN)

FEATURES

Complimentary to S8550

Collector Current: IC=0.5A

MARKING: J3Y

/D9D/

MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

40

V

VCEO

Collector-Emitter Voltage

25

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current -Continuous

0.5

A

PC

Collector Dissipation

0.3

W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-55-150

℃

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC= 100μA, IE=0

40

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=1mA, IB=0

25

V

Emitter-base breakdown voltage

V(BR)EBO

IE=100μA, IC=0

5

V

Collector cut-off current

ICBO

VCB=40 V , IE=0

0.1

μ

A

Collector cut-off current

ICEO

VCB=20V , I E=0

0.1

μ

A

Emitter cut-off current

IEBO

VEB= 5V , IC=0

0.1

μ

A

HFE(1)

VCE=1V, I C= 50mA

120

350

DC current gain

HFE(2)

VCE=1V, I C= 500mA

50

Collector-emitter saturation voltage

VCE(sat)

I=500 mA, IB= 50mA

0.6

V

Base-emitter saturation voltage

VBE(sat)

IC=500 mA, IB= 50mA

1.2

V

Transition frequency

fT

VCE=6V, I C= 20mA

f=30MHz

150

MHz

CLASSIFICATION OF hFE(1)

Rank

L

H

Range

120-200

200-350

SOT-23

1. BASE

2. EMITTER

3. COLLECTOR

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